Device scientist in simulation and characterization of SiC power MOSFETs

Device scientist in simulation and characterization of silicon carbide (SiC) power MOSFETs


Do you want to join the silicon carbide revolution and replace Si IGBTs in the motor drive system of electric cars?
Do you have a strong interest in power semiconductor devices, and practical skills for working with application type measurements like switching and ruggedness tests?
Do you want to work in a globally operating SiC device development Team in a large semiconductor company?
If so, then you may be the device scientist we are looking for in our SiC development Team based in Stockholm, Sweden.


Role & Responsibility


- Switching measurements and avalanche ruggedness measurements for SiC MOSFETs using an existing double-pulse setup.
- Maintenance and further development of the double-pulse setup to enable new types of measurements when needed.
- Electrical characterization of SiC power MOSFETs as packaged devices and on wafer
- Simulation of SiC power MOSFETs for analyzing application conditions with focus on understanding phenomena like switching power losses, limits of safe operating area and oscillations.
- Cooperation with other labs and teams within the company in application tests.
- Updating and reporting progress in SiC power MOSFET development projects.


Qualification & Requirement


- Master of Science or PhD in electrical engineering, engineering Physics or similar
- Experience and skills in electrical device characterization. Experience of application
type power device measurements (like switching or ruggedness) are meriting.
- Hands-on experience with simulation of semiconductor devices and/or
circuit simulations of power electronics.
- Previous work in the semiconductor or power electronics industry or research
groups in the same fields
- Good skills in English, speaking and writing
- Good background knowledge in semiconductor devices and/or power electronics
- Team orientation with good communication and social skills