Postdoc in Next generation of GaN HEMT for highly linear amplifiers

Do you want to be a part of the European GaN success story? This project works with the leading GaN industries in Europe and need the best people for developing next generation of GaN HEMTs. We will together push the limits in terms of power density, energy efficiency, and especially linearity.

Information about the research
There is an increasing demand in society for more capacity in the mobile networks, as well as smaller and multi-functional sensors for security applications. Furthermore, the energy consumption of all the systems should not increase, but rather decrease. Research carried out at the Microwave Electronics Laboratory (MEL) address this issue and wants to enable sustainable wireless systems. MEL employs more than 40 people performing world-class research on high speed electronic components, circuits, and systems for a wide range of communication and sensing applications in the frequency range from 1 GHz to 500 GHz and beyond. Our facilities include a uniquely well-equipped laboratory for advanced millimeter wave measurements and a state-of-the art cleanroom facility.

In recent years, electronic devices and circuits based on wide bandgap semiconductors such as SiC and III-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and energy efficiency figure of merits. Next generation of highly integrated mm‐wave frontends for communication and sensors could potentially be designed using GaN semiconductor technology. GaN is not only a game changer for the microwave industry, but especially the power electronics industry benefits significantly from the increase power handling, higher switching speed and higher energy efficiency of GaN.

We have in-house GaN technologies at Chalmers targeting both the microwave as well as the power electronics industries. These technologies are developed in close collaboration with industrial partners, ranging from epitaxial growth companies, all the way up to system suppliers. We want to enable our technology for our partners, and hence specific model for certain applications are needed for use in circuit simulators. The technology is constantly evolving, and hence the modeling activity is a continuous activity that runs in parallel.

Major responsibilities
In your work, you will focus on characterization and modeling of III-nitride devices for high frequency as well as high power applications. The dynamic effects, due to electron trapping and self-heating, are of significant importance to accurately predict by the model, and hence dedicated measurements need to be developed and performed.

You will be a member in a team of other senior researchers and PhD students, both from industry and academia, working with semiconductor technology development, measurements, modeling, circuit design, and realization of complete wireless system demonstrators.

Position summary
Full-time temporary employment. The position is limited to a maximum of two years (1+1).

Qualifications
You have a PhD degree in the area of III-V or III-N material, component or circuit development or characterization, generally not older than two years. In the work, you will not only perform characterization, but also be part in the component and material development in collaboration with other researchers as well as industrial partners.

You are enthusiastic, like to drive and conclude projects independently, take own initiatives and discuss/develop own ideas, be creative and have a problem-solving mindset. The project is in collaboration with other researchers and industry. Hence you will be able to increase your professional network with relevant industries.

Chalmers continuously strives to be an attractive employer. Equality and diversity are substantial foundations in all activities at Chalmers.

Our offer to you
Chalmers offers a cultivating and inspiring working environment in the dynamic city of Gothenburg. 
Read more about working at Chalmers and our benefits for employees.

Application procedure
The application should be marked with Ref 20200317 and written in English. The application should be sent electronically and be attached as pdf-files, as below:

CV: (Please name the document as: CV, Surname, Ref. number) including:
• CV, include complete list of publications
• Previous teaching and pedagogical experiences
• Two references that we can contact.

Personal letter: (Please name the document as: Personal letter, Family name, Ref. number)
1-3 pages where you:
• Introduce yourself
• Describe your previous research fields and main research results
• Describe your future goals and future research focus

Other documents:
• Attested copies of completed education, grades and other certificates.

Please use the button at the foot of the page to reach the application form. The files may be compressed (zipped).

Application deadline: 31 July, 2020

For questions, please contact:
Senior Researcher Mattias Thorsell, MEL
E-mail: mattias.thorsell@chalmers.se

Professor Niklas Rorsman, MEL
E-mail: niklas.rorsman@chalmers.se

*** Chalmers declines to consider all offers of further announcement publishing or other types of support for the recruiting process in connection with this position. *** 
   



Chalmers University of Technology conducts research and education in engineering sciences, architecture, technology-related mathematical sciences, natural and nautical sciences, working in close collaboration with industry and society. The strategy for scientific excellence focuses on our six Areas of Advance; Energy, Health Engineering, Information and Communication Technology, Materials Science, Production and Transport. The aim is to make an active contribution to a sustainable future using the basic sciences as a foundation and innovation and entrepreneurship as the central driving forces. Chalmers has around 11,000 students and 3,000 employees. New knowledge and improved technology have characterised Chalmers since its foundation in 1829, completely in accordance with the will of William Chalmers and his motto: Avancez!