Wide-Band-Gap Semiconductor Design expert

Job Responsibility: 
A senior expert position focused on the design and manufacturing of SiC & GaN devices; 
Lead and deliver research projects on time and with high-quality, and complete the entire research project development with related team members; 
Take ownership over understanding internal client requirements and drivers and foresee technical challenges, successfully interacting with clients both technically and commercially; 
Define power semiconductor product planning, project design, application and reliability evaluation; 
Define construction of power semiconductor design platform, including device layout design, simulation, and bench testing and reliability evaluation platform. Provide necessary training for key personnel; 
Lead the technical and trend analysis of the new generation power semiconductors. 
Desired skills: 
PhD Degree in Power Electronics/Semiconductor, Physics or similar related field. 
Over 10 years of relevant working experience in power semiconductor device development with wide bandgap power device technology; 
Deep understanding on wide bandgap power semiconductor design, process development and failure analysis Have successful experience on power semiconductor product development and production;  
Experience on power semiconductor product chain management; 
Very good English skills in written and spoken (working language), Good teamwork ability and communication skills.  
Must be eligible to work in the European Union to be considered for this position 
Preferred Power Electronics/Semiconductor Physics related, Work experience of well-known power semiconductor companies; Research and production experience on wide band gap power semiconductor devices (SiC & GaN);